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EM25LV010-25KGBS 参数 Datasheet PDF下载

EM25LV010-25KGBS图片预览
型号: EM25LV010-25KGBS
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )串行闪存 [1 Megabit (128K x 8) Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 536 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM25LV010  
1 Megabit (128K x 8) Serial Flash Memory  
SPECIFICATION  
Read Manufacturer and Device ID (RDID)  
The Read Manufacturer/Device ID (RDID) instruction provides both the JEDEC assigned  
manufacturer ID and the specific device ID. The Read Manufacture/Device ID (RDID)  
instruction is very similar to the Release from Deep Power-Down (RES) and Read Device ID  
instruction. The instruction is initiated by driving the Chip Select (S#) Low and shifting the  
instruction code “90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the  
Manufacturer ID for ELAN (7Fh, 7Fh, 1Fh) and the Device ID (10h) are shifted out on the  
falling edge of the serial clock (C) with the most significant bit (MSB) shifted out first as shown  
in Figure 22. If the 24-bit address is initially set to 000001h, the Device ID will be read first  
and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read  
continuously, alternating from one to the other. The instruction is completed by driving Chip  
Select (S#) High.  
Power-Up and Power-Down  
At Power-up and Power-down, the device must not be selected (that is, the Chip Select, S#,  
must follow the voltage applied on VCC) until VCC reaches the correct value:  
Vcc(min) at Power-up, and then for a further delay of tVSL  
Vss at Power-down  
Usually a simple pull-up resistor on Chip Select (S#) is used to insure safe and proper  
Power-up and Power-down.  
To prevent data corruption and inadvertent write during power up, a Power On Reset (POR)  
circuit is included in the device. The logic inside the device is held at reset when VCC is less  
than the POR threshold value. All operations of VWI are disabled, and the device does not  
respond to any instruction.  
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Block Erase (BE),  
Chip Erase(CE), and Write Status Register (WRSR) instructions until a time delay of tPUW has  
elapsed after the instant where VCC rises above the VWI threshold. However, the device may  
not operate correctly if VCC remains below VCC(min) at such time. No Write Status Register,  
Program, or Erase instruction should be sent until–  
tPUW after Vcc passed the VWI threshold  
tVSL after Vcc passed the Vcc(min) level  
These values are specified in Table 8.  
If the delay (tVSL) has elapsed after VCC has risen above VCC(min), the device can be selected  
for READ instructions even if the tPUW delay has not yet fully elapsed.  
This specification is subject to change without further notice. (11.08.2004 V1.0)  
Page 18 of 30  
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