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EM25LV010-25KGBS 参数 Datasheet PDF下载

EM25LV010-25KGBS图片预览
型号: EM25LV010-25KGBS
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )串行闪存 [1 Megabit (128K x 8) Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 536 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM25LV010  
1 Megabit (128K x 8) Serial Flash Memory  
SPECIFICATION  
At Power-up, the device is in the following state:  
The device is in the Standby mode (not the Deep Power-Down mode).  
The Write Enable Latch (WEL) bit is reset.  
At Power-down, when VCC drops from the operating voltage to below the POR threshold value  
(VWI), all operations are disabled and the device does not respond to any instruction. If a  
Power-down occurs while a Write, Program, or Erase cycle is in progress, some data  
corruption may occur.  
VCC  
VCC(max)  
Program, Erase and Write Commands are Rejected by the Device  
Chip Selection Not Allowed  
tPUW  
VCC(min)  
VWI  
Reset State of  
the Device  
Device Fully  
Accessible  
tVSL  
Read Access Allowed  
time  
Figure 4: Power-up Timing  
Symbol  
Parameter  
Min  
1
Max  
Unit  
V
VWI  
tVSL  
tPUW  
Write Inhibit Voltage  
2
VCC(min) to S# low  
10  
1
µs  
Time Delay to Write Instruction  
10  
ms  
Table 8: Power-Up Timing and VWI Threshold Voltage  
This specification is subject to change without further notice. (11.08.2004 V1.0)  
Page 19 of 30  
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