EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Initial Delivery State
The device is delivered with the memory array erased, all bits are set to “1” (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are set to “0”)
Maximum Rating
Stressing the device above the rating listed in the “Absolute Maximum Ratings" (see table
below) may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the Operating
sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Symbol
TSTG
Parameter
Min
Max
150
235
4.0
Unit
°C
°C
V
Storage Temperature
-65
TLEAD
VIO
Lead Temperature during Soldering (20 seconds max)1
Input and Output Voltage (with respect to ground)
Supply Voltage
-0.6
-0.6
VCC
4.0
V
VESD
Electrostatic Discharge Voltage (Human body model)2
-2000
2000
V
Notes: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100pF, R1=1500Ω, R2=500Ω)
Table 9: Absolute Maximum Ratings
DC and AC Parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables are
derived from tests performed under the Measurement Conditions summarized in the relevant
tables.
Symbol
VCC
Parameter
Min
2.7
Max
2.6
Unit
V
Supply Voltage
Ambient Operating Temperature
TA
-40
85
°C
Table 10: Operating Conditions
Symbol
Parameter
Min
Max
Unit
pF
ns
V
CL
Load Capacitance
30
Input Rise and Fall Times
Input Pulse Voltage
5
0.2VCC to 0.8 VCC
0.3VCC to 0.7 VCC
Input and Output Timing Reference Voltage
Note: Output Hi-Z is defined as the point where data out is no longer driven.
V
Table 11: AC Measurement Conditions
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 20 of 30
ELAN [ ELAN MICROELECTRONICS CORP ]
