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HM51W16165LTT-5 参数 Datasheet PDF下载

HM51W16165LTT-5图片预览
型号: HM51W16165LTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM ( 1 - Mword ×16位), 4K的刷新/ 1千刷新 [16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 35 页 / 598 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM51W16165 Series, HM51W18165 Series  
Truth Table  
RAS  
LCAS  
UCAS  
WE  
D
OE  
Output  
Open  
Valid  
Operation  
Standby  
H
D
L
D
H
L
D
L
H
L
Lower byte Read cycle  
Upper byte  
L
H
L
H
L
Valid  
L
L
H
L
Valid  
Word  
L
L
H
L
L*2  
L*2  
L*2  
L*2  
L*2  
L*2  
H to L  
H to L  
H to L  
D
D
Open  
Open  
Open  
Lower byte Early write cycle  
Upper byte  
L
H
L
D
L
L
D
Word  
L
L
H
L
H
Undefined Lower byte Delayed write cycle  
Undefined Upper byte  
L
H
L
H
L
L
H
Undefined Word  
L
L
H
L
L to H  
L to H  
L to H  
D
Valid  
Valid  
Valid  
Open  
Open  
Open  
Open  
Open  
Lower byte Read-modify-write cycle  
L
H
L
Upper byte  
Word  
L
L
L
H
H
L
H
L
Word  
Word  
Word  
Word  
RAS-only refresh cycle  
H to L  
H to L  
H to L  
L
D
D
CAS-before-RAS refresh cycle or  
Self refresh cycle (L-version)  
H
L
D
D
L
D
D
L
L
H
H
Read cycle (Output disabled)  
Notes: 1. H: High (inactive) L: Low (active) D: H or L  
2. tWCS 0 ns Early write cycle  
tWCS < 0 ns Delayed write cycle  
3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by the earliest of  
UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.)  
However write OPERATION and output HIZ control are done independently by each UCAS,  
LCAS.  
ex. if RAS = H to L, UCAS = H, LCAS = L, then CAS-before-RAS refresh cycle is selected.  
Data Sheet E0153H10  
6