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HM5164805FTT-5 参数 Datasheet PDF下载

HM5164805FTT-5图片预览
型号: HM5164805FTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 64男EDO DRAM ( 8 Mword × 8位)为8K刷新/ 4K的刷新 [64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 34 页 / 220 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号HM5164805FTT-5的Datasheet PDF文件第11页浏览型号HM5164805FTT-5的Datasheet PDF文件第12页浏览型号HM5164805FTT-5的Datasheet PDF文件第13页浏览型号HM5164805FTT-5的Datasheet PDF文件第14页浏览型号HM5164805FTT-5的Datasheet PDF文件第16页浏览型号HM5164805FTT-5的Datasheet PDF文件第17页浏览型号HM5164805FTT-5的Datasheet PDF文件第18页浏览型号HM5164805FTT-5的Datasheet PDF文件第19页  
HM5164805F Series, HM5165805F Series  
Self Refresh Mode (L-version)  
HM5164805FL/HM5165805FL  
-5  
-6  
Parameter  
Symbol  
tRASS  
Min  
100  
90  
Max  
Min  
100  
110  
50  
Max  
Unit  
µs  
Notes  
25  
RAS pulse width (self refresh)  
RAS precharge time (self refresh)  
CAS hold time (self refresh)  
tRPS  
ns  
25  
tCHS  
50  
ns  
Notes: 1. AC measurements assume tT = 2 ns.  
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization  
cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh).  
3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a  
reference point only; if tRCD is greater than the specified tRCD (max) limit, than the access time is  
controlled exclusively by tCAC  
.
4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a  
reference point only; if tRAD is greater than the specified tRAD (max) limit, then access time is  
controlled exclusively by tAA.  
5. Either tOED or tCDD must be satisfied.  
6. Either tDZO or tDZC must be satisfied.  
7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition  
times are measured between VIH (min) and VIL (max).  
8. Assumes that tRCD tRCD (max) and tRAD tRAD (max). If tRCD or tRAD is greater than the maximum  
recommended value shown in this table, tRAC exceeds the value shown.  
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.  
10. Assumes that tRCD tRCD (max) and tRCD + tCAC (max) tRAD + tAA (max).  
11. Assumes that tRAD tRAD (max) and tRCD + tCAC (max) tRAD + tAA (max).  
12. Either tRCH or tRRH must be satisfied for a read cycles.  
13. tOFF (max), tOEZ (max), tWEZ (max) and tOFR (max) define the time at which the outputs achieve the  
open circuit condition and are not referred to output voltage levels.  
14. tWCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters. They are included inthedata  
sheet as electrical characteristics only; if tWCS tWCS (min), the cycle is an early write cycle and the  
data out pin will remain open circuit(high impedance) throughout the entire cycle; iftRWD t RWD (min),  
tCWD tCWD (min), and tAWD tAWD (min),ortCWD tCWD (min),tAWD tAWD (min) and tCPW tCPW (min),the  
cycle is a read-modify-write and the data output will contain data read from the selected cell; if  
neither of the above sets of conditions is satisfied, the condition of the data out (at access time)is  
indeterminate.  
15. tDS and tDH are referredto CAS leading edge in earlywrite cycles and to WE leading edgeindelayed  
write or read-modify-write cycles.  
16. tRASP defines RAS pulse width in EDO page mode cycles.  
17. Access time is determined by the longest among tAA, tCAC and tCPA  
.
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data  
to the device.  
19. When output buffers are enabled once, sustain the low impedance state until valid data is  
obtained. When output buffer is turned on and off within a very short time, generally it causes large  
VCC/VSS line noise, which causes to degrade VIH min/VIL max level.  
Data Sheet E0098H10  
15