HM5164805F Series, HM5165805F Series
AC Characteristics (Ta = 0 to +70˚C, VCC = 3.3 V ± 0.3 V, VSS = 0 V) *1, *2, *19
Test Conditions
•
•
•
•
•
Input rise and fall time: 2 ns
Input pulse levels: VIL = 0 V, VIH = 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + CL (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5164805F/HM5165805F
-5
Min
84
30
8
-6
Parameter
Symbol
tRC
Max
—
Min
104
40
Max
—
Unit
ns
Notes
Random read or write cycle time
RAS precharge time
tRP
—
—
ns
CAS precharge time
tCP
—
10
—
ns
RAS pulse width
tRAS
tCAS
tASR
tRAH
tASC
tCAH
tRCD
tRAD
tRSH
tCSH
tCRP
tOED
tDZO
tDZC
tT
50
8
10000 60
10000 10
10000 ns
10000 ns
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
0
—
—
—
—
37
25
—
—
—
—
—
—
50
0
—
—
—
—
45
30
—
—
—
—
—
—
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
10
0
0
8
10
14
12
15
40
5
12
10
13
38
5
3
4
CAS hold time
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS delay time from Din
Transition time (rise and fall)
13
0
15
0
5
6
6
7
0
0
2
2
Data Sheet E0098H10
11
ELPIDA [ ELPIDA MEMORY ]
