HM5164805F Series, HM5165805F Series
Write Cycle
HM5164805F/HM5165805F
-5
Min
0
-6
Parameter
Symbol
tWCS
tWCH
tWP
Max
—
Min
0
Max
—
Unit
ns
Notes
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
14
8
—
10
10
15
10
0
—
ns
8
—
—
ns
tRWL
tCWL
tDS
13
8
—
—
ns
—
—
ns
0
—
—
ns
15
15
Data-in hold time
tDH
8
—
10
—
ns
Read-Modify-Write Cycle
HM5164805F/HM5165805F
-5
-6
Parameter
Symbol
tRWC
Min
116
67
Max
—
Min
140
79
Max
—
Unit
ns
Notes
Read-modify-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
tRWD
—
—
ns
14
14
14
tCWD
30
—
34
—
ns
tAWD
42
—
49
—
ns
tOEH
13
—
15
—
ns
Refresh Cycle
HM5164805F/HM5165805F
-5
Min
5
-6
Min
5
Parameter
Symbol
Max
—
Max
—
Unit
ns
Notes
CAS setup time (CBR refresh cycle) tCSR
CAS hold time (CBR refresh cycle)
WE setup time (CBR refresh cycle)
WE hold time (CBR refresh cycle)
RAS precharge to CAS hold time
tCHR
tWRP
tWRH
tRPC
8
—
10
0
—
ns
0
—
—
ns
8
—
10
5
—
ns
5
—
—
ns
Data Sheet E0098H10
13
ELPIDA [ ELPIDA MEMORY ]
