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EDE1108ABSE-4A-E 参数 Datasheet PDF下载

EDE1108ABSE-4A-E图片预览
型号: EDE1108ABSE-4A-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 82 页 / 645 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第63页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第64页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第65页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第66页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第68页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第69页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第70页浏览型号EDE1108ABSE-4A-E的Datasheet PDF文件第71页  
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE  
T-1  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
Tn  
/CK  
CK  
A10 = 1  
Posted  
READ  
NOP  
Command  
ACT  
tRAS(min.)  
DQS, /DQS  
tRP  
AL = 2  
CL = 3  
RL = 5  
out0 out1 out2 out3  
DQ  
tRC (min.)  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRAS lockout case)  
(RL = 5, BL = 4 (AL = 2, CL = 3))  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
/CK  
CK  
A10 = 1  
Posted  
READ  
NOP  
ACT  
NOP  
Command  
tRAS(min.)  
DQS, /DQS  
tRP (min.)  
AL = 2  
CL = 3  
RL = 5  
out0 out1 out2 out3  
DQ  
tRC  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRP limit)  
(RL = 5, BL = 4 (AL = 2, CL = 3, tRTP 2tCK))  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
CK  
/CK  
A10 = 1  
READ  
NOP  
Command  
ACT  
tRAS (min.)  
DQS, /DQS  
AL = 2  
CL = 3  
tRP  
RL = 5  
out0 out1 out2 out3 out4 out5 out6 out7  
DQ  
tRC  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank  
(RL = 5, BL = 8 (AL = 2, CL = 3, tRTP 2tCK))  
Data Sheet E0852E50 (Ver. 5.0)  
67  
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