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EDD1208ALTA-7A 参数 Datasheet PDF下载

EDD1208ALTA-7A图片预览
型号: EDD1208ALTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128 M位同步DRAM是双倍数据速率( 4 -银行, SSTL_2 ) [128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2)]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 78 页 / 1650 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1204ALTA, EDD1208ALTA, EDD1216ALTA  
9. Precharge  
9.1 Read to Precharge Command Interval  
The precharge command can be issued anytime after tRAS (MIN.) is satisfied. Soon after the precharge command is  
issued, precharge operation performed and the DDR SDRAM enters the idle state after tRP is satisfied. The  
parameter tRP is the time required to perform the precharge.  
The earliest timing in a read cycle that a precharge command can be issued without losing any data in the burst is  
as follows.  
/CAS latency = 2  
: (burst length/2) clocks after the read command is issued.  
/CAS latency = 2.5 : (burst length/2) clocks after the read command is issued.  
Burst length = 4  
T5  
T0  
T1  
T2  
T3  
T4  
CLK  
/CLK  
CKE  
/CAS latency = 2  
Command  
READ  
PRE  
Hi-Z  
Hi-Z  
DQS  
DQ  
Q1  
Q2  
Q3  
Q4  
/CAS latency = 2.5  
READ  
PRE  
Command  
Hi-Z  
Hi-Z  
DQS  
DQ  
Q1  
Q2  
Q3  
Q4  
(Must satisfy tRAS)  
26  
Preliminary Data Sheet E0136E30  
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