EBE11ED8ABFA
AC Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS = 0V)
(DDR2 SDRAM Component Specification)
-5C
533
-4A
400
Frequency (Mbps)
Parameter
Symbol min.
max.
5
min.
3
max.
5
Unit
tCK
ns
Notes
/CAS latency
CL
4
Active to read or write command delay tRCD
15
15
15
15
Precharge command period
tRP
tRC
tAC
ns
Active to active/auto refresh command
time
55
55
ns
DQ output access time from CK, /CK
−500
+500
+450
0.55
0.55
−600
−500
0.45
0.45
+600
+500
0.55
0.55
ps
DQS output access time from CK, /CK tDQSCK −450
ps
CK high-level width
CK low-level width
tCH
tCL
0.45
0.45
tCK
tCK
min.
(tCL, tCH)
min.
(tCL, tCH)
CK half period
tHP
ps
Clock cycle time
tCK
tDH
tDS
3750
225
8000
5000
275
8000
ps
ps
ps
DQ and DM input hold time
DQ and DM input setup time
5
4
100
150
Control and Address input pulse width
for each input
tIPW
tDIPW
tHZ
0.6
0.6
tCK
tCK
ps
DQ and DM input pulse width for each
input
0.35
0.35
Data-out high-impedance time from
CK,/CK
tAC max.
tAC max.
tAC max.
tAC max.
Data-out low-impedance time from
CK,/CK
tLZ
tAC min.
tAC min.
ps
DQS-DQ skew for DQS and associated
DQ signals
tDQSQ
300
400
350
450
ps
DQ hold skew factor
tQHS
tQH
ps
ps
DQ/DQS output hold time from DQS
tHP – tQHS
tHP – tQHS
Write command to first DQS latching
transition
tDQSS WL − 0.25
WL + 0.25
WL − 0.25
WL + 0.25
tCK
DQS input high pulse width
tDQSH 0.35
tDQSL 0.35
0.35
0.35
0.2
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
tDSS
tDSH
0.2
0.2
2
0.2
Mode register set command cycle time tMRD
2
Write preamble setup time
Write postamble
tWPRES 0
0
tWPST 0.4
tWPRE 0.25
0.6
0.4
0.6
Write preamble
0.25
475
350
0.9
Address and control input hold time
Address and control input setup time
Read preamble
tIH
tIS
375
250
5
4
ps
tRPRE 0.9
tRPST 0.4
1.1
1.1
tCK
tCK
ns
Read postamble
0.6
0.4
0.6
Active to precharge command
Active to auto-precharge delay
tRAS
tRAP
40
70000
40
70000
tRCD min.
tRCD min.
ns
Data Sheet E0379E40 (Ver. 4.0)
15