EBD21RD4ABNA
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
mA
Test condition
Notes
1, 2, 9
-7A, -7B
-10
3830
3550
CKE ≥ VIH,
tRC = tRC (min.)
Operating current (ACTV-PRE) IDD0
Operating current
IDD1
-7A, -7B
-10
-7A, -7B
-10
4190
3910
427
420
CKE ≥ VIH, BL = 4,
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1, 2, 5
4
(ACTV-READ-PRE)
CL = 3.5, tRC = tRC (min.)
Idle power down standby current IDD2P
CKE ≤ VIL
Floating idle
IDD2F
-7A, -7B
-10
1580
1390
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
4, 5
Standby current
Quiet idle
Standby current
-7A, -7B
-10
1220
1210
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
IDD2Q
4, 10
3
Active power down standby
-7A, -7B
-10
1040
1030
IDD3P
current
CKE ≤ VIL
-7A, -7B
-10
2480
2290
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
Active standby current
IDD3N
IDD4R
IDD4W
IDD5
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
Operating current
(Burst read operation)
-7A, -7B
-10
4460
3820
CKE ≥ VIH, BL = 2,
CL = 3.5
Operating current
(Burst write operation)
-7A, -7B
-10
4460
3820
CKE ≥ VIH, BL = 2,
CL = 3.5
-7A, -7B
-10
-7A, -7B
-10
6260
5800
463
457
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
Auto refresh current
Self refresh current
IDD6
Operating current
(4 banks interleaving)
-7A, -7B
-10
7880
7240
IDD7A
BL = 4
5, 6, 7
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once per one every two clock cycles.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)
Parameter
Symbol
IL
min.
–2
max.
2
Unit
µA
Test condition
Notes
Input leakage current
Output leakage current
Output high current
Output low current
VDD ≥ VIN ≥ VSS
VDDQ ≥ VOUT ≥ VSS
VOUT = 1.95V
IOZ
–5
5
µA
IOH
IOL
–15.2
15.2
—
—
mA
mA
VOUT = 0.35V
Preliminary Data Sheet E0273E20 (Ver. 2.0)
11
ELPIDA [ ELPIDA MEMORY ]
