Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
P-channel Characteristic Curves(Cont.)
Gat e Char ge Char act er i st i cs
ID =- 6A
Capacitance Characteristics
10
1500
1200
f =1MHz
GS
V = 0 V
8
6
4
Ci ss
VDS = - 15V
- 20V
900
600
Coss
Cr ss
2
0
300
0
40
0
10
DS
20
30
0
3
6
9
12
- V , Drain-Source Voltage(V)
Qg - Gate Charge(nC)
Single Pulse Maximum Power Dissipation
SinglePulse
Maximum Safe Operating Area
DS(ON) Limit
50
100
10
R
θJA = 125°C/W
R
T = 25°C
A
40
30
100μs
1ms
10ms
100ms
1
0.1
1s
10s
DC
20
10
V = 10V
GS
Single Pulse
RθJA= 125°C/W
TA = 25°C
0
0.01
1
0.1
10
100
0.001
0.01
0.1
1
10
100
1000
-V - Drain-Source Voltage( V)
DS
t1 ,Time( sec)
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
0.01
PDM
t1
t2
t1
t2
0.01
1.Duty Cycle,D=
2.RθJA =125°C/W
3.T - T = P* RθJA (t)
Single Pulse
J
A
4.RθJA(t)=r(t) + R
θJA
0.001
10
-4
-3
-2
-1
10
10
10
t1 ,Time (sec)
1
10
100
1000
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
