Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
N-channel Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
2.4
2.2
2.0
1.8
25
20
VGS= 10V
8.0V
7.0V
6.0V
15
10
VGS = 6.0 V
1.6
1.4
1.2
7.0 V
8.0 V
10 V
5
0
1.0
0.8
0
5
10
15
20
25
0
1
2
3
4
5
ID - Drain Current(A)
V - Drain-Source Voltage(V)
DS
On-Resistance Variation with Temperature
On-Resistance Variation with Gate-to-Source Voltage
1.9
0.09
ID = 7A
= 10V
ID =3.5 A
V
GS
0.08
0.07
1.6
1.3
1.0
0.7
0.4
0.06
0.05
T = 125°C
A
0.04
0.03
T = 25°C
A
0.02
0.01
-50
-25
0
25
50
75 100
125
150
2
4
6
8
10
T - Junct ion Temperat ure (°C)
J
V - Gate-Source Voltage(V)
GS
Body Diode Forward Voltage Variation with
Source Current and Temperature
Transfer Characteristics
18
100
V = 10V
DS
V GS= 0V
15
12
9
T A= 125°C
10
TA = -55°C
25°C
1
0.1
25°C
-55°C
125°C
6
0.01
3
0
0.001
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V - Gate-to-Source Voltage(V)
GS
VSD - Body Diode Forward Voltage(V)
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
