Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
P-channel Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
2.5
25
V
GS = - 10.0V
- 8.0V
- 7.0V
20
15
10
5
2
- 6.0V
VGS = - 6.0 V
- 7.0 V
- 8.0 V
- 10.0 V
1.5
1
0.5
0
0
5
10
15
20
25
0
1
2
3
4
5
- ID - Drain Current(A)
-V - Drain-to-Source Voltage(V)
DS
On-Resistance Variation with Temperature
On-Resistance Variation with Gate-to-Source Voltage
ID =- 3A
1.9
0.2
ID =-6 A
GS =- 10V
V
1.6
1.3
1.0
0.15
0.1
TA = 125°C
TA = 25°C
0.05
0
0.7
0.4
-50
-25
0
25
50
75 100
125 150
2
4
6
8
10
T - Junct ion Temperat ure (°C)
J
- V - Gate-to-Source Voltage(V)
GS
Body Diode Forward Voltage Variation
with Source Current and Temperature
Transfer Characteristics
100
12
10
8
V = - 10V
DS
T = -55°C
A
V
GS = 0V
10
1
T = 125°C
A
25°C
6
-55°C
25°C
0.1
125°C
4
0.01
2
0
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3
5
4
6
2
-V - Body Diode Forward Voltage(V)
SD
-VGS - Gate-SourceVoltage( V)
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
