Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Limits
N-channel P-channel
Parameter
Symbol
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
VGS
ID
40
±20
7
-40
±20
-6
V
V
A
A
Continuous Drain Current @TC=25 °C (Note 1)
Continuous Drain Current @TC=100 °C (Note 1)
Pulsed Drain Current (Note 2)
ID
6
-5
IDM
Pd
28
-24
A
2.4
W
Total Power Dissipation @TA=25°C (Note 1)
Linear Derating Factor
0.016
W / °C
°C
°C/W
°C/W
Operating Junction and Storage Temperature Range Tj, Tstg
-55~+175
62.5
Thermal Resistance, Junction-to-Ambient (Note 1)
Thermal Resistance, Junction-to-Case
Rth,ja
Rth,jc
25
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
40
1.0
-
1.5
-
-
-
-
3.0
±100
1
25
28
V
V
nA
μA
μA
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=32V, VGS=0
VDS=30V, VGS=0, Tj=125°C
ID=7A, VGS=10V
-
-
-
-
-
IDSS
25
30
*RDS(ON)
*GFS
mΩ
36
ID=6A, VGS=7V
-
19
-
S
VDS=5V, ID=7A
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
916
79
56
2.3
7.2
11
6
9.1
2.3
3
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=20V, VGS=0, f=1MHz
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Ω
VDS=10V, ID=1A, VGS=10V, RG=6
nC
VDS=20V, ID=7A, VGS=10V
VGS=0V, IS=7A
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
*ISM
-
-
-
-
-
-
1.3
7
20
V
A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
