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CY7C1041DV33-10ZSXIT 参数 Datasheet PDF下载

CY7C1041DV33-10ZSXIT图片预览
型号: CY7C1041DV33-10ZSXIT
PDF下载: 下载PDF文件 查看货源
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分类和应用:
文件页数/大小: 17 页 / 567 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1041DV33
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR
Description
V
CC
for data retention
Data retention current
V
CC
= V
DR
= 2.0 V, CE > V
CC
– 0.3 V, Industrial
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V
Auto-A
Auto-E
t
CDR[18]
t
R[19]
Chip deselect to data retention time
Operation recovery time
Conditions
Min
2.0
0
t
RC
Max
10
10
15
Unit
V
mA
mA
mA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
CE
3.0 V
t
CDR
V
DR
> 2 V
3.0 V
t
R
Switching Waveforms
Figure 4. Read Cycle No. 1
t
RC
ADDRESS
t
OHA
DATA OUT
PREVIOUS DATA VALID
t
AA
DATA VALID
Notes
16. No input may exceed V
CC
+ 0.3 V.
17. Automotive product information is preliminary.
18. Tested initially and after any design or process changes that may affect these parameters.
19. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 50
μs
or stable at V
CC(min.)
> 50
μs.
20. Device is continuously selected. OE, CE, BHE, and BLE = V
IL
.
21. WE is HIGH for read cycle.
Document Number: 38-05473 Rev. *I
Page 7 of 17