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CY7C1360B-166AC 参数 Datasheet PDF下载

CY7C1360B-166AC图片预览
型号: CY7C1360B-166AC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流水线式SRAM [9-Mbit (256K x 36/512K x 18) Pipelined SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 859 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1360B  
CY7C1362B  
CY7C1360B–Pin Definitions (continued)  
TQFP  
3-Chip  
Enable  
TQFP  
2-Chip  
Enable  
Name  
ADSP  
BGA  
fBGA  
I/O  
Description  
Address Strobe from Processor, sampled on  
84  
84  
A4  
B9  
Input-  
Synchronous the rising edge of CLK, active LOW. When  
asserted LOW, addresses presented to the device  
are captured in the address registers. A1, A0 are  
also loaded into the burst counter. When ADSP and  
ADSC are both asserted, only ADSP is recognized.  
ASDP is ignored when CE1 is deasserted HIGH.  
85  
64  
B4  
T7  
A8  
Input-  
AddressStrobefromController, sampledonthe  
85  
64  
ADSC  
ZZ  
Synchronous rising edge of CLK, active LOW. When asserted  
LOW, addresses presented to the device are  
captured in the address registers. A1, A0 are also  
loaded into the burst counter. When ADSP and  
ADSC are both asserted, only ADSP is recognized.  
H11  
Input-  
ZZ “Sleep” Input, active HIGH. When asserted  
Asynchro- HIGH places the device in a non-time-critical  
nous  
“sleep” condition with data integrity preserved. For  
normal operation, this pin has to be LOW or left  
floating. ZZ pin has an internal pull-down.  
52,53,56, 52,53,56,  
57,58,59, 57,58,59,  
62,63,68, 62,63,68,  
69,72,73, 69,72,73,  
74,75,78, 74,75,78,  
K6,L6,  
M6,N6,  
K7,L7,  
N7,P7,  
E6,F6,  
M11,L11,  
I/O-  
Bidirectional Data I/O lines. As inputs, they feed  
DQs,  
K11,J11, Synchronous into an on-chip data register that is triggered by the  
DQPs  
J10,K10,  
L10,M10,  
D10,E10,  
F10,G10,  
D11,E11,  
F11,G11,  
D1,E1,F1,  
risingedge of CLK. As outputs, they deliver the data  
contained in the memory location specified by the  
addresses presented during the previous  
clock rise  
79,2,3,6,7, 79,2,3,6,7, G6,H6,  
8,9,12,13,1 8,9,12,13,1 D7,E7,  
of the read cycle. The direction of the pins is  
controlled by OE. When OE is asserted LOW, the  
pins behave as outputs. When HIGH, DQs and  
DQPX are placed in a three-state condition.  
8,19,22,  
8,19,22,  
G7,H7,  
D1,E1,  
23,24,25, 23,24,25,  
28,29,51, 28,29,51,  
G1,H1, G1,D2,E2,  
80,1,30  
80,1,30  
E2,F2,  
F2,G2,J1,  
G2,H2, K1,L1,M1,  
K1,L1,  
N1,P1,  
J2,K2,L2,  
M2,N11,  
K2,L2, C11,C1,N1  
M2,N2,  
P6,D6,  
D2,P2  
VDD  
15,41,65, 15,41,65, J2,C4,J4, D4,D8,E4, PowerSupply Power supply inputs to the core of the device.  
91  
91  
R4,J6  
E8,F4,F8,  
G4,G8,H4,  
H8,J4,J8,  
K4,K8,L4,  
L8,M4,M8  
VSS  
17,40,67, 17,40,67,  
90 90  
D3,E3, C4,C5,C6,  
F3,H3, C7,C8,D5,  
K3,M3, D6,D7,E5,  
Ground  
Ground for the core of the device.  
N3,P3,  
D5,E5,  
E6,E7,F5,  
F6,F7,G5,  
F5,H5, G6,G7,H2,  
K5,M5, H5,H6,H7,J  
N5,P5  
5,J6,J7,  
K5,K6,K7,  
L5,L6,L7,  
M5,M6,M7,  
N4,N8  
Document #: 38-05291 Rev. *C  
Page 7 of 34  
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