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CY62187EV30LL-55BAXIT 参数 Datasheet PDF下载

CY62187EV30LL-55BAXIT图片预览
型号: CY62187EV30LL-55BAXIT
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 4MX16, 55ns, CMOS, PBGA48, 8 X 9.50 MM, 1.40 MM HEIGHT, LEAD FREE, MO-205, FBGA-48]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 510 K
品牌: CYPRESS [ CYPRESS ]
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CY62187EV30 MoBL®  
Thermal Resistance  
Parameter[9]  
Description  
Test Conditions  
FBGA  
Unit  
JA  
Thermal Resistance  
(Junction to Ambient)  
Still Air, soldered on a 3 × 4.5 inch,  
2-layer printed circuit board  
59.06  
C/W  
JC  
Thermal Resistance  
(Junction to Case)  
14.08  
C/W  
Figure 2. AC Test Loads and Waveforms  
ALL INPUT PULSES  
90%  
10%  
R1  
VCC  
OUTPUT  
VCC  
90%  
10%  
GND  
Fall Time = 1 V/ns  
R2  
30 pF  
Rise Time = 1 V/ns  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to: THEVENIN EQUIVALENT  
RTH  
OUTPUT  
V
Table 1. AC Test Loads  
Parameter  
R1  
2.5 V  
16667  
15385  
8000  
3.3 V  
Unit  
1103  
1554  
645  
R2  
RTH  
VTH  
1.20  
1.75  
V
Data Retention Characteristics  
Over the Operating Range  
Parameter  
Description  
Conditions  
Min  
1.5  
Typ[10]  
Max  
Unit  
V
VDR  
VCC for Data Retention  
[11]  
ICCDR  
Data Retention Current VCC = 1.5 V, CE1 > VCC – 0.2 V or CE2 < 0.2 V or  
(BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or  
48  
A  
VIN < 0.2 V  
[9]  
tCDR  
Chip Deselect to Data  
Retention Time  
0
ns  
ns  
[12]  
tR  
Operation Recovery Time  
55  
Figure 3. Data Retention Waveform [13]  
DATA RETENTION MODE  
> 1.5 V  
VCC(min)  
tCDR  
VCC(min)  
tR  
VDR  
VCC  
CE or  
1
BHE.BLE  
or  
CE  
2
Notes  
9. Tested initially and after any design or process changes that may affect these parameters.  
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = V  
, T = 25 °C.  
CC  
CC(typ)  
A
11. Chip enables (CE and CE ) and Byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I  
/ I  
spec. Other inputs can be left floating.  
1
2
SB2 CCDR  
12. Full device operation requires linear V ramp from V to V  
13. BHE.BLE is the AND of both BHE and BLE. Chip is deselected by either disabling the chip enable signals or by disabling both BHE and BLE.  
> 100 s or stable at V  
> 100 s.  
CC  
DR  
CC(min)  
CC(min)  
Document Number: 001-48998 Rev. *E  
Page 5 of 14  
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