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CY62128EV30LL-45ZXI 参数 Datasheet PDF下载

CY62128EV30LL-45ZXI图片预览
型号: CY62128EV30LL-45ZXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8)静态RAM [1 Mbit (128K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 946 K
品牌: CYPRESS [ CYPRESS ]
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CY62128EV30 MoBL®  
Document History Page  
Document Title: CY62128EV30 MoBL® 1 Mbit (128K x 8) Static RAM  
Document Number: 38-05579  
REV.  
ECN NO. Issue Date Orig. of  
Change  
Description of Change  
**  
285473  
461631  
See ECN  
See ECN  
PCI  
New Data Sheet  
*A  
NXR Converted from Preliminary to Final  
Removed 35 ns Speed Bin  
Removed “L” version of CY62128EV30  
Removed Reverse TSOP I package from Product offering.  
Changed ICC (Typ) from 8 mA to 11 mA and ICC (Max) from 12 mA to 16 mA for f = fmax  
Changed ICC (max) from 1.5 mA to 2.0 mA for f = 1 MHz  
Changed ISB2 (max) from 1 µA to 4 µA  
Changed ISB2 (Typ) from 0.5 µA to 1 µA  
Changed ICCDR (max) from 1 µA to 3 µA  
Changed the AC Test load Capacitance value from 50 pF to 30 pF  
Changed tLZOE from 3 to 5 ns  
Changed tLZCE from 6 to 10 ns  
Changed tHZCE from 22 to 18 ns  
Changed tPWE from 30 to 35 ns  
Changed tSD from 22 to 25 ns  
Changed tLZWE from 6 to 10 ns  
Updated the Ordering Information table.  
*B  
*C  
464721  
See ECN  
NXR Updated the Block Diagram on page # 1  
1024520 See ECN  
VKN Added final Automotive-A and Automotive-E information  
Added footnote #9 related to ISB2 and ICCDR  
Updated Ordering Information table  
Document #: 38-05579 Rev. *C  
Page 11 of 11  
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