CY62128EV30 MoBL®
Thermal Resistance
Parameter
Description
Test Conditions
TSOP I
SOIC
STSOP
Unit
ΘJA
Thermal Resistance
(Junction to Ambient) two-layer printed circuit board
Still Air, soldered on a 3 x 4.5 inch,
33.01
48.67
32.56
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
3.42
25.86
3.59
°C/W
AC Test Loads and Waveforms
R1
ALL INPUT PULSES
90%
VCC
VCC
OUTPUT
90%
10%
10%
R2
GND
Rise Time = 1 V/ns
30 pF
Fall Time = 1 V/ns
INCLUDING
JIG AND
Equivalent to:
THEVENIN EQUIVALENT
SCOPE
RTH
OUTPUT
V
Parameters
2.50V
16667
15385
8000
3.0V
1103
1554
645
Unit
Ω
R1
R2
Ω
RTH
VTH
Ω
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
VCC for Data Retention
Data Retention Current
Conditions
Min Typ[3] Max Unit
VDR
1.5
V
[7]
ICCDR
VCC = 1.5V,
Ind’l/Auto-A
Auto-E
3
µA
µA
CE1 > VCC − 0.2V or CE2 < 0.2V,
IN > VCC − 0.2V or VIN < 0.2V
30
V
[8]
tCDR
Chip Deselect to Data Retention
Time
0
ns
ns
[9]
tR
Operation Recovery Time
tRC
Data Retention Waveform [10]
DATA RETENTION MODE
VCC(min)
VCC(min)
V
DR
> 1.5V
VCC
CE
t
t
R
CDR
Notes:
9. Full device AC operation requires linear V ramp from V to V
> 100 µs or stable at V
2
> 100 µs.
CC(min)
CC
DR
CC(min)
10. CE is the logical combination of CE and CE . When CE is LOW and CE is HIGH, CE is LOW; when CE is HIGH or CE is LOW, CE is HIGH.
1
2
1
1
2
Document #: 38-05579 Rev. *C
Page 4 of 11
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