CY62128EV30 MoBL®
Output Current into Outputs (LOW)............................. 20 mA
Maximum Ratings
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Latch up Current.....................................................> 200 mA
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Operating Range
Ambient
[6]
Device
Range
VCC
Supply Voltage to Ground
Potential......................................... –0.3V to VCC(max) + 0.3V
Temperature
CY62128EV30LL Ind’l/Auto-A –40°C to +85°C 2.2V to
3.6V
DC Voltage Applied to Outputs
in High-Z State[4, 5]......................... –0.3V to VCC(max) + 0.3V
Auto-E
–40°C to +125°C
DC Input Voltage[4,5] ...................... –0.3V to VCC(max) + 0.3V
Electrical Characteristics (Over the Operating Range)
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Parameter
Description
Test Conditions
IOH = –0.1 mA
Min Typ[3] Max
Min Typ[3] Max Unit
VOH
Output HIGH Voltage
2.0
2.4
2.0
2.4
V
V
IOH = –1.0 mA, VCC > 2.70V
VOL
Output LOW Voltage
Input HIGH Voltage
IOL = 0.1 mA
0.4
0.4
0.4
0.4
V
V
V
IOL = 2.1 mA, VCC > 2.70V
VCC = 2.2V to 2.7V
VIH
1.8
2.2
VCC
+
1.8
2.2
VCC +
0.3V
0.3V
VCC= 2.7V to 3.6V
VCC
+
VCC
+
V
0.3V
0.3V
VIL
Input LOW Voltage
VCC = 2.2V to 2.7V
VCC= 2.7V to 3.6V
–0.3
–0.3
–1
0.6
0.8
+1
–0.3
–0.3
–4
0.6
0.8
+4
V
V
IIX
Input Leakage Current GND < VI < VCC
µA
µA
mA
mA
IOZ
ICC
Output Leakage Current GND < VO < VCC, Output Disabled
–1
+1
–4
+4
VCC Operating Supply
Current
f = fmax = 1/tRC VCC = VCCmax
11
16
11
35
IOUT = 0 mA
CMOS levels
f = 1 MHz
1.3
2.0
1.3
4.0
ISB1
Automatic CE
Power down
CE1 > VCC−0.2V, CE2 < 0.2V
1
1
4
4
1
1
35
30
µA
VIN > VCC–0.2V, VIN < 0.2V)
Current — CMOS Inputs f = fmax (Address and Data Only),
f = 0 (OE and WE), VCC = 3.60V
[7]
ISB2
Automatic CE
Power down
CE1 > VCC – 0.2V, CE2 < 0.2V
IN > VCC – 0.2V or VIN < 0.2V,
µA
V
Current — CMOS Inputs f = 0, VCC = 3.60V
Capacitance (For all packages)[8]
Parameter Description
Test Conditions
Max
10
Unit
CIN
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
CC = VCC(typ)
pF
pF
V
COUT
10
Notes:
4. V
5. V
= –2.0V for pulse durations less than 20 ns.
IL(min)
= V +0.75V for pulse durations less than 20 ns.
IH(max)
CC
6. Full device AC operation assumes a 100 µs ramp time from 0 to V (min) and 200 µs wait time after V stabilization.
CC
CC
7. Only chip enables (CE and CE ) must be at CMOS level to meet the I / I spec. Other inputs can be left floating.
1
2
SB2 CCDR
8. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05579 Rev. *C
Page 3 of 11
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