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BCM43362KUBG 参数 Datasheet PDF下载

BCM43362KUBG图片预览
型号: BCM43362KUBG
PDF下载: 下载PDF文件 查看货源
内容描述: [Telecom Circuit, 1-Func, CMOS, PBGA69, WLBGA-69]
分类和应用: 电信电信集成电路
文件页数/大小: 60 页 / 5201 K
品牌: CYPRESS [ CYPRESS ]
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CYW43362  
15. Package Information  
15.1 Package Thermal Characteristics  
Table 29. Package Thermal Characteristicsa  
Characteristic  
Value in Still Air  
44.88  
1.20  
0.20  
JA (°C/W)  
JB (°C/W)  
JC (°C/W)  
JT (°C/W)  
JB (°C/W)  
0.04  
14.21  
125  
Maximum Junction Temperature Tj (°C)b  
Maximum Power Dissipation (W)  
1.2  
a. No heat sink, TA = 70°C. This is an estimate based on a 4-layer PCB that conforms to EIA/JESD51–7 (101.6 mm x 114.3 mm x 1.6 mm) and P  
= 1.2W continuous dissipation.  
b. Absolute junction temperature limits maintained through active thermal monitoring and dynamic Tx duty cycle limiting.  
15.1.1 Junction Temperature Estimation and PSI Versus Thetajc  
Package thermal characterization parameter PSI-JT () yields a better estimation of actual junction temperature (T ) versus using  
JT  
J
the junction-to-case thermal resistance parameter Theta-J (JC). The reason for this is JC assumes that all the power is dissipated  
C
through the top surface of the package case. In actual applications, some of the power is dissipated through the bottom and sides of  
the package. takes into account power dissipated through the top, bottom, and sides of the package. The equation for calculat-  
JT  
ing the device junction temperature is as follows:  
T = T + P   
JT  
J
T
Where:  
T = junction temperature at steady-state condition, °C  
J
T = package case top center temperature at steady-state condition, °C  
T
P = device power dissipation, Watts  
= package thermal characteristics (no airflow), °C/W  
JT  
Document No. 002-14779 Rev. *G  
Page 56 of 60  
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