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7C1359A-150 参数 Datasheet PDF下载

7C1359A-150图片预览
型号: 7C1359A-150
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18的同步流水线高速缓存RAM标签 [256K x 18 Synchronous-Pipelined Cache Tag RAM]
分类和应用:
文件页数/大小: 24 页 / 234 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号7C1359A-150的Datasheet PDF文件第2页浏览型号7C1359A-150的Datasheet PDF文件第3页浏览型号7C1359A-150的Datasheet PDF文件第4页浏览型号7C1359A-150的Datasheet PDF文件第5页浏览型号7C1359A-150的Datasheet PDF文件第7页浏览型号7C1359A-150的Datasheet PDF文件第8页浏览型号7C1359A-150的Datasheet PDF文件第9页浏览型号7C1359A-150的Datasheet PDF文件第10页  
CY7C1359A/GVT71256T18  
Truth Table[5, 6, 7, 8, 9, 10, 11]  
Address  
Used  
Operation  
CE CE2 CE2 ADSP ADSC  
ADV WRITE OE  
CLK  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
L-H  
DQ  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
Q
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
Deselected Cycle, Power Down  
READ Cycle, Begin Burst  
None  
None  
H
L
X
X
H
X
H
L
X
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
L
X
X
X
X
X
L
None  
L
X
L
L
None  
L
H
H
L
None  
L
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
External  
External  
External  
External  
External  
Next  
L
X
X
L
READ Cycle, Begin Burst  
L
L
L
H
X
L
High-Z  
D
WRITE Cycle, Begin Burst  
READ Cycle, Begin Burst  
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
L
L
H
H
H
H
H
H
L
Q
READ Cycle, Begin Burst  
L
L
L
H
L
High-Z  
Q
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
WRITE Cycle, Suspend Burst  
WRITE Cycle, Suspend Burst  
X
X
H
H
X
H
X
X
H
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
Next  
L
H
L
High-Z  
Q
Next  
L
Next  
L
H
X
X
L
High-Z  
D
Next  
L
Next  
L
L
D
Current  
Current  
Current  
Current  
Current  
Current  
H
H
H
H
H
H
H
H
H
H
L
Q
H
L
High-Z  
Q
H
X
X
High-Z  
D
L
D
Partial Truth Table for READ/WRITE[12]  
Function  
READ  
GW  
BWE  
WEH  
WEL  
H
H
H
H
L
H
L
L
L
X
X
H
L
X
H
H
L
READ  
WRITE one byte  
WRITE all bytes  
L
WRITE all bytes  
X
X
Notes:  
7. X means Dont Care.H means logic HIGH. L means logic LOW. WRITE = L means [BWE + WEL*WEH]*GW equals LOW. WRITE = H means [BWE +  
WEL*WEH]*GW equals HIGH. It is assumed in this truth table that DEN is LOW.  
8. WEL enables write to DQ1DQ9. WEH enables write to DQ10DQ18.  
9. All inputs except OE must meet set-up and hold times around the rising edge (LOW to HIGH) of CLK.  
10. Suspending burst generates wait cycle.  
11. ADSP LOW along with chip being selected always initiates a READ cycle at the L-H edge of CLK. A WRITE cycle can be performed by setting WRITE LOW for  
the CLK L-H edge of the subsequent wait cycle. Refer to WRITE timing diagram for clarification.  
12. X means dont care.H means logic HIGH. L means logic LOW. It is assumed in this truth table that chip is selected and ADSP is HIGH along with DEN being LOW.  
Document #: 38-05120 Rev. **  
Page 6 of 24  
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