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7C1359A-150 参数 Datasheet PDF下载

7C1359A-150图片预览
型号: 7C1359A-150
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18的同步流水线高速缓存RAM标签 [256K x 18 Synchronous-Pipelined Cache Tag RAM]
分类和应用:
文件页数/大小: 24 页 / 234 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1359A/GVT71256T18  
Pin Descriptions (continued)  
BGA Pins  
TQFP Pins  
Name  
Type  
Description  
6P  
51  
MOE  
Input  
Match Output Enable: This active LOW asynchronous input  
enables the MATCH output drivers.  
7P, 6N, 6L, 7K, 58,59, 62, 63, 68, DQ1–  
Input/  
Output  
Data Inputs/Outputs: Input data must meet setup and hold  
times around the rising edge of CLK.  
6H, 7G, 6F, 7E, 69, 72, 73, 74, 8,  
6D, 1D, 2E, 2G, 9, 12, 13, 18, 19,  
DQ18  
1H, 2K, 1L, 2M,  
22, 23, 24  
1N, 2P  
5U  
42  
TDO  
Output  
Input  
IEEE 1149.1 test output. LVTTL-level output.  
IEEE 1149.1 test inputs. LVTTL-level inputs.  
2U  
3U  
4U  
38  
39  
43  
TMS  
TDI  
TCK  
4C, 2J, 4J, 6J, 4R  
15, 41,65, 91  
VCC  
VSS  
Supply  
Ground  
Power Supply: +3.3V 5% and +10%  
3D, 5D, 3E, 5E, 5, 10, 17, 21, 26,  
3F, 5F, 5G, 3H, 40,55, 60, 67, 71,  
Ground: GND  
5H, 3K, 5K, 3L,  
3M, 5M, 3N, 5N,  
3P, 5P  
76, 90  
1A,7A,1F,7F,1J, 4, 11, 20, 27, 54,  
VCCQ  
I/O Supply  
-
Output Buffer Supply: +2.5V (from 2.375V to VCC)  
7J, 1M, 7M, 1U,  
7U  
61, 70, 77  
1B, 7B, 1C, 7C,  
1-3, 6, 7, 14, 16,  
NC  
No Connect: These signals are not internally connected.  
2D, 4D, 7D, 1E, 25, 28-30, 56, 57,  
6E, 2F, 1G, 6G, 66,75, 78, 79, 95,  
2H, 7H, 3J, 5J,  
1K, 6K, 2L, 4L,  
7L, 2N, 1P, 1R,  
5R, 7R, 1T, 4T, 6U  
96  
Burst Address Table (MODE = GND)  
Burst Address Table (MODE = NC/V  
)
CC  
First  
Address  
(external)  
Second  
Address  
(internal)  
Third  
Address  
(internal)  
Fourth  
Address  
(internal)  
First  
Address  
(external)  
Second  
Address  
(internal)  
Third  
Address  
(internal)  
Fourth  
Address  
(internal)  
A...A00  
A...A01  
A...A10  
A...A11  
A...A01  
A...A10  
A...A11  
A...A00  
A...A10  
A...A11  
A...A00  
A...A01  
A...A11  
A...A00  
A...A01  
A...A10  
A...A00  
A...A01  
A...A10  
A...A11  
A...A01  
A...A00  
A...A11  
A...A10  
A...A10  
A...A11  
A...A00  
A...A01  
A...A11  
A...A10  
A...A01  
A...A00  
Partial Truth Table for MATCH[2, 3, 4, 5, 6]  
Operation  
READ Cycle  
E
L
WE  
H
L
DEN  
MOE  
OE  
MATCH  
DQ  
Q
X
L
X
X
X
L
L
H
H
H
X
X
-
WRITE Cycle  
L
-
-
D
Fill WRITE Cycle  
L
L
H
L
High-Z  
D
COMPARE Cycle  
L
H
X
Output  
H
Deselected Cycle (MATCH Out)  
H
H
X
X
L
High-Z  
High-Z  
Deselected Cycle  
X
H
High-Z  
Notes:  
2. X means dont care.H means logic HIGH. L means logic LOW. It is assumed in this table that ADSP is HIGH and ADSC is LOW.  
3. E=L is defined as CE=LOW and CE2=LOW and CE2=HIGH. E =H is defined as CE=HIGH or CE2=HIGH or CE2=LOW. WE is defined as [BWE + WEL*WEH]*GW.  
4. All inputs except OE and MOE must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.  
5. For a write operation following a read operation, OE must be HIGH before the input data required setup time plus High-Z time for OE and staying HIGH throughout  
the input data hold time.  
6. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.  
Document #: 38-05120 Rev. **  
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