Huajing Discrete Devices
R
○
1 0 0
1 0
1
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
⎡
⎢
⎣
⎤
⎥
⎦
150 − TC
I = I25
125
VGS=10V
0 . 1
1 . 0 0 E - 0 4
1 . 0 0 E - 0 3
1 . 0 0 E - 0 2
1 . 0 0 E - 0 1
1 . 0 0 E + 0 0
1 . 0 0 E + 0 1
1 . 0 0 E - 0 5
t , P u l s e W i d t h , S e c o n d s
Figure 6 Maximun Peak Current Capability
12
1.5
1.2
0.9
0.6
0.3
0
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
11
10
9
ID=1.5A
VDS=25V
ID0.75A
ID= 0.375A
8
7
6
0
2
4
6
8
10
4
6
8
10
12
14
Vgs,Gate to Source Voltage,Volts
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
Figure 7 Typical Transfer Characteristics
and Drain Current
2.5
14
13
12
11
10
9
2
VGS=10V
ID=250μA
VGS=10V
1.5
1
0.5
0
0
0.3
0.6
0.9
1.2
1.5
-100
-50
0
50
100
150
200
Id,Drain Current,Amps
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10
2011
CONSONANCE [ Shanghai Consonance Electronics Incorporated ]
