Huajing Discrete Devices
R
○
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
Min.
600
--
Typ.
--
Max.
--
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
ID=250uA,Reference25℃
V/℃
ΔBVDSS/ΔTJ
0.71
--
--
VDS = 600V, VGS= 0V,
Ta = 25℃
--
25
Drain to Source Leakage Current
µA
IDSS
VDS =480V, VGS= 0V,
--
--
250
Ta = 125℃
VGS =+30V
VGS =-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
µA
µA
IGSS(F)
IGSS(R)
--
--
--
--
10
-10
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
Min.
--
Typ. Max.
VGS=10V,ID=0.75A
Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
7.0
8.0
4.0
ꢀ
VDS = VGS, ID = 250µA
2.0
V
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Rating
Typ.
1.0
Symbol
Parameter
Test Conditions
Units
S
Min.
--
Max.
--
VDS=20V, ID =0.75A
Forward Transconductance
Input Capacitance
gfs
Ciss
Coss
Crss
--
170
27
--
VGS = 0V VDS = 25V
f = 1.0MHz
Output Capacitance
pF
--
--
Reverse Transfer Capacitance
--
5
--
Resistive Switching Characteristics
Rating
Typ.
8
Symbol
Parameter
Test Conditions
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
--
30
--
ID =1.5A VDD = 300V
VGS = 10V RG = 4.7ꢀ
Turn-Off Delay Time
Fall Time
--
22
--
--
55
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
7.5
1.7
4.0
ID =1.5A VDD =480V
VGS = 10V
nC
Qgs
Qgd
--
--
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10
2011
CONSONANCE [ Shanghai Consonance Electronics Incorporated ]
