Huajing Discrete Devices
Characteristics Curve:
R
○
1 0
24
10μs
1
0 .1
10ms
16
8
100ms
DC
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .0 1
0 .0 0 1
TJ=150℃
TC=25℃
Single Pulse
0
25
50
Tc , Case Temperature , C
0
75
100
125
150
1
1 0
1 0 0
1 0 0 0
V d s,D ra in -to -so u rc e V o ltag e ,V o lts
Figure 1 Maximun Forward Bias Safe Operating Area
Figure 2 Maximun Power Dissipation vs Case Temperature
1.6
1.75
1.5
1.25
1
VGS=10V
1.4
1.2
VGS=9V
1
VGS=8V
0.8
0.75
0.5
0.25
0
0.6
VGS=6V
0.4
VGS=5V
0.2
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T c , C ase T em perature ,C
Vds,Drain Source Voltage,Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
1
50%
20%
0.1
0.01
10%
5%
2%
PDM
t1
1%
0.001
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.00001
Single pulse
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
1
10
100
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10
2011