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CAT24WC257W3TE13 参数 Datasheet PDF下载

CAT24WC257W3TE13图片预览
型号: CAT24WC257W3TE13
PDF下载: 下载PDF文件 查看货源
内容描述: 256K位I2C串行EEPROM CMOS [256K-Bit I2C Serial CMOS EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 10 页 / 410 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT24WC257  
ABSOLUTE MAXIMUM RATINGS*  
*COMMENT  
Temperature Under Bias  
-55°C to +125°C  
Stresses above those listed under Absolute Maximum  
Ratingsmay cause permanent damage to the device.  
These are stress ratings only, and functional operation of  
the device at these or any other conditions outside of those  
listed in the operational sections of this specification is not  
implied. Exposure to any absolute maximum rating for  
extended periods may affect device performance and  
reliability.  
Storage Temperature........................ -65°C to +150°C  
Voltage on Any Pin with  
Respect to Ground(1) ............ -2.0V to +VCC + 2.0V  
VCC with Respect to Ground ................ -2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)................................... 1.0W  
Lead Soldering Temperature (10 secs) ............ 300°C  
Output Short Circuit Current(2) ........................ 100mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Reference  
Test  
MethodMin  
Typ  
Max  
Units  
(3)  
NEND  
MIL-STD-883, Test Method 1033 100,000  
Cycles/Byte  
Years  
Volts  
(3)  
TDR  
Data Retention  
MIL-STD-883, Test Method 1008  
100  
2000  
100  
(3)  
VZAP  
ESD Susceptibility MIL-STD-883, Test Method 3015  
Latch-up JEDEC Standard 17  
(3)(4)  
ILTH  
mA  
D.C. OPERATING CHARACTERISTICS  
= +1.8V to +6.0V, unless otherwise specified.  
V
CC  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
I
Power Supply Current - Read  
f
= 100 KHz  
SCL  
1
mA  
CC1  
V =5V  
CC  
I
Power Supply Current - Write  
Standby Current  
f
= 100KHz  
3
1
mA  
CC2  
(5)  
SCL  
V
=5V  
CC  
I
V
V
= GND or V  
µA  
SB  
IN  
CC  
V
=5V  
CC  
I
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
= GND to V  
1
1
µA  
µA  
LI  
IN  
CC  
I
V
= GND to V  
OUT CC  
LO  
V
1  
V
x 0.3  
V
V
IL  
CC  
V
Input High Voltage  
V
x 0.7  
V
+ 0.5  
CC  
IH  
CC  
V
Output Low Voltage (V  
Output Low Voltage (V  
= +3.0V)  
= +1.8V)  
I
I
= 3.0 mA  
= 1.5 mA  
0.4  
0.5  
V
OL1  
OL2  
CC  
CC  
OL  
V
V
OL  
CAPACITANCE T = 25°C, f = 1.0 MHz, V  
= 5V  
CC  
A
Symbol  
Test  
Conditions  
VI/O = 0V  
VIN = 0V  
Min  
Typ  
Max  
8
Units  
pF  
(3)  
CI/O  
Input/Output Capacitance (SDA)  
(3)  
CIN  
Input Capacitance (SCL, WP, A0, A1)  
6
pF  
Note:  
(1) The minimum DC input voltage is 0.5V. During transitions, inputs may undershoot to 2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V + 2.0V for periods of less than 20ns.  
CC  
CC  
(2) Output shorted for no more than one second. No more than one output shorted at a time.  
(3) This parameter is tested initially and after a design or process change that affects the parameter.  
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1V to V +1V.  
CC  
(5) Maximum standby current (I ) = 10µA for the Automotive and Extended Automotive temperature range.  
SB  
Doc. No. 1030, Rev. E  
2
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