BSI
BS62UV1024
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
PARAMETER
TEST CONDITIONS
MIN. TYP.(1) MAX.
UNITS
NAME
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Guaranteed Input Low
0.6
0.8
VIL
-0.5
--
V
Voltage(2)
1.4
2.0
--
Guaranteed Input High
Voltage(2)
Input Leakage Current
VIH
IIL
--
--
--
Vcc+0.2
V
Vcc = Max, VIN = 0V to Vcc
1
1
uA
uA
Vcc = Max, CE1= VIH, CE2= VIL, or
IOL
Output Leakage Current
--
OE = VIH, VI/O = 0V to Vcc
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
VOL
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 1mA
--
--
--
0.4
--
V
1.6
2.4
--
--
--
--
VOH
Vcc = Min, IOH = -0.5mA
V
--
--
--
--
0.01
0.02
10
20
0.5
1
0.3
1
Operating Power Supply CE1 = VIL, or CE2 = VIH
,
,
ICC
mA
mA
uA
Current
I
DQ = 0mA, F = Fmax(3)
CE1 = VIH, or CE2 = VIL
ICCSB
ICCSB1
Standby Current-TTL
I
DQ = 0mA, F = Fmax(3)
CE1ЊVcc-0.2V, CE2Љ0.2V,
--
--
Standby Current-CMOS
V
INЊVcc-0.2V or VINЉ0.2V
o
1. Typical characteristics are at TA = 25 C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
(1)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
UNITS
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
Data Retention Current
--
0
0.02
0.3
uA
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
TRC
O
1. Vcc = 1.5V, TA = + 25 C
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
t
Vcc
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
CE1
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR Њ 1.5V
V
Vcc
Vcc
t
Vcc
R
t
CDR
CE2 Љ 0.2V
VIL
VIL
CE2
Revision 2.2
April 2001
R0201-BS62UV1024
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
