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TSC2005 参数 Datasheet PDF下载

TSC2005图片预览
型号: TSC2005
PDF下载: 下载PDF文件 查看货源
内容描述: 1.6V至3.6V , 12位,纳安级功耗, 4线触摸屏控制器,SPI接口 [1.6V to 3.6V, 12-Bit, Nanopower, 4-Wire TOUCH SCREEN CONTROLLER with SPI Interface]
分类和应用: 控制器
文件页数/大小: 42 页 / 797 K
品牌: BB [ BURR-BROWN CORPORATION ]
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TSC2005  
www.ti.com  
SBAS379DECEMBER 2006  
OVERVIEW (continued)  
INTERNAL TEMPERATURE SENSOR  
In some applications, such as battery recharging, a measurement of ambient temperature is required. The  
temperature measurement technique used in the TSC2005 relies on the characteristics of a semiconductor  
junction operating at a fixed current level. The forward diode voltage (VBE) has a well-defined characteristic  
versus temperature. The ambient temperature can be predicted in applications by knowing the +25°C value of  
the VBE voltage and then monitoring the delta of that voltage as the temperature changes.  
The TSC2005 offers two modes of temperature measurement. The first mode requires calibration at a known  
temperature, but only requires a single reading to predict the ambient temperature. The TEMP1 diode, shown in  
Figure 22, is used during this measurement cycle. This voltage is typically 580mV at +25°C with a 10µA current.  
The absolute value of this diode voltage can vary a few millivolts; the temperature coefficient (TC) of this voltage  
is very consistent at –2.1mV/°C. During the final test of the end product, the diode voltage would be stored at a  
known room temperature, in system memory, for calibration purposes by the user. The result is an equivalent  
temperature measurement resolution of 0.3°C/LSB (1LSB = 610µV with VREF = 2.5V).  
SNSVDD  
+IN  
Converter  
-IN  
AGND  
Figure 22. Functional Block Diagram of Temperature Measurement Mode  
The second mode does not require a test temperature calibration, but uses a two-measurement (differential)  
method to eliminate the need for absolute temperature calibration and for achieving 2°C/LSB accuracy. This  
mode requires a second conversion of the voltage across the TEMP2 diode with a resistance 80 times larger  
than the TEMP1 diode. The voltage difference between the first (TEMP1) and second (TEMP2) conversion is  
represented by:  
kT  
q
DV +  
@ ln(N)  
(3)  
Where:  
N is the resistance ratio = 80,  
k = Boltzmann's constant (1.38054 × 10-23 electrons volts/degrees Kelvin),  
q = the electron charge (1.602189 × 10-19°C),  
T = the temperature in degrees Kelvin (K).  
This method can provide much improved absolute temperature measurement, but a lower resolution of  
1.6°C/LSB. The resulting equation to solve for T is:  
q @ DV  
k @ ln(N)  
T +  
(4)  
Where:  
V = VBE (TEMP2) – VBE(TEMP1) (in mV)  
T = 2.648 V (in K)  
°C = 2.648 • ∆ V – 273  
Temperature 1 and/or temperature 2 measurements have the same timing as Figure 38.  
13  
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