SDRAM
AS4SD8M16
Austin Semiconductor, Inc.
CAPACITANCE2
PARAMETER
SYM
MIN
MAX
UNITS
NOTES
Input Capacitance: CLK
C
2
3.5
pF
29
I1
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
C
2
3.5
6.0
pF
pF
30
31
I2
C
4.0
IO
AC FUNCTIONAL CHARACTERISTICS5,6,7,8,9,11
PARAMETER
SYMBOL
-75
UNITS
NOTES
READ/WRITE command to READ/WRITE command
t
1
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
17
CCD
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
t
1
1
0
0
2
0
5
2
1
1
2
2
3
2
14
14
CKED
t
PED
DQD
DQM
t
17
DQM to data mask during WRITEs
t
17
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
t
17
DQZ
t
17
DWD
t
15, 21
16, 21
17
DAL
DPL
BDL
CDL
RDL
Data-in to PRECHARGE command
t
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
t
t
t
17
16, 21
26
LOAD MODE REGISTER command to ACTIVE or REFRESH command
t
MRD
CL = 3
CL = 2
t
t
17
ROH(3)
ROH(2)
Data-out to high-impedance from PRECHARGE command
17
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD8M16
Rev. 0.5 04/05
28
AUSTIN [ AUSTIN SEMICONDUCTOR ]
