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AS4SD8M16DG-75/XT 参数 Datasheet PDF下载

AS4SD8M16DG-75/XT图片预览
型号: AS4SD8M16DG-75/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆: 8梅格×16 SDRAM同步动态随机存取存储 [128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 51 页 / 6953 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD8M16  
Austin Semiconductor, Inc.  
NOTES (continued):  
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be  
applied on each positive clock edge during these states.  
Refreshing:  
Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRC is  
met,  
the SDRAM will be in the all banks idle state.  
Accessing Mode  
Register:  
Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met.  
Once tMRD is met, the SDRAM will be in the all banks idle state.  
Precharging All: States with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is  
met,  
all banks will be in the idle state.  
6. All states and sequences not shown are illegal or reserved.  
7. Not bank-specific; requires that all banks are idle.  
8. May or may not be bank-specific; if all banks are to be precharged, all must be in valid state for precharging.  
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.  
10. READs or WRITEs listed in the Command column include READs or WRITEs with auto precharge enabled and READs  
or WRITEs with auto precharge disabled.  
11. Does not affect the state of the bank and acts as a NOP to that bank.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD8M16  
Rev. 0.5 04/05  
24  
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