SDRAM
AS4SD8M16
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the op-
eration section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity (plas-
tics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS...................................................-1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS...................................................-1V to +4.6V
Operating Temperature, TA (IT)..........................-40°C to +85°C
Operating Temperature, TA (ET).......................-45°C to +105°C
Operating Temperature, TA (XT).......................-55°C to +125°C
Storage Temperature (plastic)............................-55°C to +150°C
Power Dissipation...................................................................1W
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS1,5,6
(VDD, VDDQ = +3.3V ±0.3V)
PARAMETER
SYMBOL
, V
MIN
MAX
UNITS
NOTES
Supply Voltage
V
Q
3
3.6
V
DD DD
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
V
2.2
V
+ 0.3
V
V
22
22
IH
DD
V
-0.3
0.8
IL
I
Input Leakage Current: Any input 0V < V < V
IN
DD
I
-5
-5
5
5
µA
µA
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled:
I
OZ
0V < V
< V
Q
OUT
DD
Output Levels:
Output High Voltage (I
V
2.4
---
---
V
V
OH
= -4mA)
= 4mA)
OUT
OUT
Output Low Voltage (I
V
0.4
OL
IDD SPECIFICATIONS AND CONDITIONS1,5,6,11,13 (VDD, VDDQ = +3.3V ±0.3V)
PARAMETER
Operating Current: Active Mode;
Burst = 2; READ or WRITE; t = t (MIN)
SYMBOL MAX (-75) UNITS NOTES
3, 18,
I
150
2
mA
mA
DD1
DD2
19, 32
RC
RC
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
I
32
Standby Current: Active Mode;
3, 12,
CKE = HIGH; CS\ = HIGH; All banks active after t
No accesses in progress
met;
I
50
mA
RCD
DD3
19, 32
Operating Current: Burst Mode; Continuous Burst;
READ or WRITE: All banks active
3, 18,
I
I
I
150
310
3
mA
mA
mA
DD4
DD5
DD6
19, 32
t
= t
(MIN)
3, 12,
18, 19,
32, 33
RFC
RFC
Auto Refresh Current
CS\ = HIGH; CKE = HIGH
t
= 15.625 µs
RFC
Standard
I
I
2
1
mA
mA
4, 35
35
DD7
SELF REFRESH CURRENT: CKE < 0.2V
Low Power (L)
DD7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD8M16
Rev. 0.5 04/05
27
AUSTIN [ AUSTIN SEMICONDUCTOR ]
