SDRAM
AS4SD8M16
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING
CONDITIONS5,6,8,9,11
-75
PARAMETER
SYM
MIN
MAX
UNITS
NOTES
t
5.4
ns
27
AC(3)
CL = 3
CL = 2
Access time from CLK (pos. edge)
t
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
AC(2)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
t
0.8
1.5
2.5
2.5
7.5
10
AH
t
AS
t
CH
t
CL
t
t
23
23
CK(3)
CK(2)
CL = 3
CL = 2
Clock cycle time
CKE hold time
t
0.8
1.5
0.8
1.5
0.8
1.5
CKH
CKS
CKE setup time
t
CS\, RAS\, CAS\, WE\, DQM hold time
CS\, RAS\, CAS\, WE\, DQM setup time
Data-in hold time
t
CMH
CMS
t
t
DH
Data-in setup time
t
DS
t
t
5.4
6
10
10
HZ(3)
HZ(2)
CL = 3
CL = 2
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
t
1
3
LZ
t
OH
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command
ACTIVE to READ or WRITE delay
Refresh period (8,192 rows)
AUTO REFRESH period
t
1.8
44
66
20
28
N
OH
t
120,000
64 / 24
RAS
t
RC
t
RCD
t
t
34
35
REF
66
20
15
0.3
RFC
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
t
RP
t
RRD
t
1.2
7
T
1 CLK +
7.5ns
15
ns
24
WRITE recovery time
t
WR
ns
ns
25
Exit SELF REFRESH to ACTIVE command
t
75
20, 35
XSR
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AS4SD8M16
Rev. 0.5 04/05
29
AUSTIN [ AUSTIN SEMICONDUCTOR ]
