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AS4SD8M16 参数 Datasheet PDF下载

AS4SD8M16图片预览
型号: AS4SD8M16
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆: 8梅格×16 SDRAM同步动态随机存取存储 [128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储动态存储器
文件页数/大小: 51 页 / 6953 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD8M16  
Austin Semiconductor, Inc.  
FIGURE 1: Mode Register Definition TABLE 1: Burst Definition  
BURST STARTING  
ORDER OF ACCESSES WITHIN A BURST  
LENGTH  
COLUMN TYPE = SEQUENTIAL TYPE = INTERLEAVED  
A0  
2
0
1
0-1  
1-0  
0-1  
1-0  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
4
8
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1-  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
Cn, Cn+1, Cn+2, Cn+3,  
Cn+4…  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
Full  
Page  
(y)  
n=A0-A8  
(location 0-y)  
Not Supported  
…Cn-1,  
Cn…  
NOTES:  
1. For full-page access: y=512  
2. For a burst length of two, A1-A8 select the block-of-two burst;  
A0 selects the starting column within the block.  
3. For a burst length of four, A2-A8 select the block-of-four burst;  
A0-A1 selects the starting column within the block.  
4. For a burst length of eight, A3-A8 select the block-of-eight burst; A0-A2  
selects the starting column within the block.  
5. For a full-page burst, the full row is selected and A0-A8 select the starting  
column.  
6. Whenever a boundary of the block is reached within a given sequence  
above, the following access wraps within the block.  
7. For a burst length of one, A0-A8 select the unique column to be accessed,  
and mode register bit M3 is ignored.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD8M16  
Rev. 0.5 04/05  
5
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