SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
WRITE -- DQM OPERATION1
T0
T1
T2
T3
T4
T5
T6
T7
t
CL
CLK
CKE
t
t
CK
CH
t
t
CKS
CKH
t
t
CMS
CMH
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
ACTIVE
t
t
CMS
CMH
DQM /
DQML,
DQMH
t
t
AS
AH
A0-A9,
A11
COLUMN
m2
ROW
t
t
AS
AH
ENABLE AUTO PRECHARGE
ROW
A10
t
t
AS
AH
DISABLE AUTO PRECHARGE
BA0, BA1
BANK
BANK
t
t
t
t
t
t
DS
DS
DH
DS
DH
DH
DIN
m
DIN m+2
DIN m+3
DQ
Don’t Care
Undefined
t
RCD
TIMING PARAMETERS
-8
-10
-8
-10
MIN
1
MAX
MIN
1
MAX
SYMBOL*
tAH
UNITS
ns
MIN
MAX
MIN
3
MAX
SYMBOL*
UNITS
ns
2
1
tCKS
tCMH
tCMS
tDH
tAS
2
3
3
ns
ns
ns
ns
ns
ns
1
3
ns
ns
ns
ns
ns
tCH
3.5
3.5
10
15
1
2
tCL
1
1
3
tCK(3)
tCK(2)
tCKH
2
3
8
tDS
20
30
12
1
tRCD
* CAS latency indicated in parentheseses.
NOTES: 1. For this example, the burst length = 4.
2. x16: A8, A9 and A11 = “Don’t Care.”
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 2.1 6/05
48
AUSTIN [ AUSTIN SEMICONDUCTOR ]
