SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
WRITE -- FULL-PAGE BURST
T0
T1
CL
T2
CK
T3
T4
T5
Tn+1
Tn+2
Tn+3
t
t
CLK
t
CH
t
t
CKS
CKH
CKE
t
t
CMS
CMH
BURST
TERM
COMMAND
NOP
ACTIVE
NOP
WRITE
NOP
NOP
NOP
NOP
t
t
CMS
CMH
DQM /
DQML,
DQMH
t
t
AS
AH
A0-A9,
A11
COLUMN
m1
ROW
t
t
AS
AH
ROW
A10
BA0, BA1
DQ
t
t
AS
AH
BANK
BANK
t
t
t
t
t
t
t
t
t
t
t
t
DS
DS
DS
DH
DS
DH
DS
DH
DH
DH
DS
DH
DIN
m
DIN m+3
DIN m-1
DIN m+1
DIN m+2
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command.2,3
t
RCD
256 (x16) locations within same row.
Full page completed.
Don’t Care
Undefined
TIMING PARAMETERS
-8
-10
-8
-10
MIN
2
MAX
MIN
3
MAX
MIN
1
MAX
MIN
1
MAX
SYMBOL*
tCKS
UNITS
ns
SYMBOL*
tAH
UNITS
ns
1
2
1
3
ns
ns
ns
ns
ns
tCMH
tCMS
tDH
tAS
2
3
3
ns
ns
ns
ns
ns
ns
tCH
3.5
3.5
10
15
1
1
1
tCL
3
2
3
tDS
tCK(3)
tCK(2)
tCKH
8
20
30
tRCD
12
1
* CAS latency indicated in parentheseses.
NOTES: 1. x16: A8, A9 and A11 = “Don’t Care.”
2. tWR must be satisfied prior to PRECHARGE command.
3. Page left open, no tRP
.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 2.1 6/05
47
AUSTIN [ AUSTIN SEMICONDUCTOR ]
