SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
AUTO REFRESH MODE1
T0
T1
T2
Tn +1
To +1
t
t
CK
CL
CLK
CKE
t
CH
t
t
CKS CKH
t
t
CMS
CMH
AUTO
REFRESH
AUTO
REFRESH
NOP
COMMAND
PRECHARGE
NOP
NOP
NOP
NOP
ACTIVE
DQM /
DQML,
DQMH
A0-A9,
A11
ROW
ROW
ALL BANKS
A10
SINGLE BANK
t
t
AS AH
BANK(S)
BANK
BA0, BA1
DQ
High-Z
t
t
t
RP
RC
RC
Don’t Care
Undefined
TIMING PARAMETERS
-8
-10
-8
-10
MIN
MAX
MIN
1
MAX
SYMBOL*
tCKH
UNITS
ns
MIN
1
MAX
MIN
1
MAX
SYMBOL*
tAH
UNITS
1
2
ns
ns
ns
ns
ns
ns
tCKS
tCMH
tCMS
tRC
3
1
ns
ns
ns
ns
ns
tAS
2
3
3
1
tCH
3.5
3.5
10
15
2
3
tCL
3
80
24
90
30
tCK (3)
tCK (2)
8
tRP
12
* CAS latency indicated in parentheses.
NOTE: 1. EachAUTO REFRESH command performs a refresh cycle. Back-to-back commands are not required.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 2.1 6/05
37
AUSTIN [ AUSTIN SEMICONDUCTOR ]
