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AS4SD4M16DG-10/XT 参数 Datasheet PDF下载

AS4SD4M16DG-10/XT图片预览
型号: AS4SD4M16DG-10/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4梅格×16 SDRAM同步动态随机存取存储 [4 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 50 页 / 1139 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD4M16  
Austin Semiconductor, Inc.  
4
Interrupted by a WRITE (with or without AUTO  
WRITE with AUTO PRECHARGE  
PRECHARGE): A WRITE to bank m will interrupt a  
WRITE on bank n when registered. The PRECHARGE to  
3. Interrupted by a READ (with or without AUTO  
PRECHARGE): A READ to bank m will interrupt a  
WRITE on bank n when registered, with the data-out  
appearing CAS latency later. The PRECHARGE to bank  
bank n will begin after tWR is met, where tWR begins when  
the WRITE to bank m is registered. The last valid data  
WRITE to bank n will be data registered one clock prior  
to a WRITE to bank 1 (Figure 27).  
will begin after tWR is met, where tWR begins when the  
READ to bank m is registered. The last valid WRITE to  
bank n will be data-in registered one clock prior to the  
READ to bank m (Figure 26).  
T7  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
WRITE-AP  
BANKm  
WRITE-AP  
BANK n  
COMMAND  
NOP  
NOP  
NOP  
NOP  
NOP  
Precharge  
NOP  
BANK n  
Internal  
States  
WRITE with burst of 4  
Interrupt Burst, Write back  
Page Active  
tRP-BANK m  
tRP-BANK n  
tWR - BANK n  
Page Active  
BANK m  
READ with burst of 4  
BANK n,  
COL a  
BANK m,  
COL d  
ADDRESS  
DQ  
D
a+1  
IN  
DIN  
a
DOUT d+1  
DOUT  
d
CAS Latency = 3 (BANK m)  
NOTE: DQM is LOW.  
Figure 26  
WRITE WITH AUTO PRECHARGE INTERRUPTED BY A READ  
T7  
T6  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
WRITE-AP  
BANKm  
WRITE-AP  
BANK n  
NOP  
COMMAND  
NOP  
NOP  
NOP  
NOP  
Precharge  
NOP  
BANK n  
Internal  
States  
Page Active  
Interrupt Burst, Write back  
WRITE with burst of 4  
tWR-BANK m  
tRP-BANK n  
t
- BANK n  
WR  
Page Active  
BANK m  
WRITE with burst of 4  
Write back  
BANK n,  
COL a  
BANK m,  
COL d  
ADDRESS  
DQ  
D
a+1  
D
D
D
D
IN  
D
a+2  
IN  
IN  
dIN  
d+1  
d+2  
IN  
IN  
DIN  
a
d+3  
Don’t Care  
NOTE: DQM is LOW.  
Figure 27  
WRITE WITH AUTO PRECHARGE INTERRUPTED BY A WRITE  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD4M16  
Rev. 1.5 10/01  
24  
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