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AS4SD4M16DG-10/XT 参数 Datasheet PDF下载

AS4SD4M16DG-10/XT图片预览
型号: AS4SD4M16DG-10/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4梅格×16 SDRAM同步动态随机存取存储 [4 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 50 页 / 1139 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD4M16  
Austin Semiconductor, Inc.  
TRUTH TABLE 3 - CURRENT STATE BANK n - COMMAND TO BANK n  
(Notes 1 to 6; notes appear below and on next page)  
CURRENT STATE CS\ RAS\ CAS\ WE\ COMMAND (ACTION)  
NOTES  
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
ACTIVE (Select and activate row)  
ANY  
L
AUTO REFRESH  
7
7
Idle  
L
L
LOAD MODE REGISTER  
L
H
L
L
PRECHARGE  
11  
10  
10  
8
H
H
L
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Deactivate row in bank or banks)  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Truncate READ burst, start PRECHARGE)  
BURST TERMINATE  
Row Active  
L
H
L
L
H
H
L
H
L
10  
10  
8
Read ( Auto-  
Precharge  
Disabled)  
L
H
H
L
L
H
H
H
L
L
9
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE (Truncate WRITE burst, start PRECHARGE)  
BURST TERMINATE  
10  
10  
8
Write ( Auto-  
Precharge  
Disabled)  
L
H
H
L
H
L
9
NOTE:  
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table 2) and after tXSR has been met (if the previous  
state was self refresh).  
2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank and the commands shown are those allowed  
to be issued to that bank when in that state. Exceptions are covered in the notes below.  
3. Current state definitions:  
Idle:  
The bank has been precharged, andtRP has been met.  
Row Active: A row in the bank has been activated, andtRCD has been met. No data bursts/accesses and no register accesses are  
in progress.  
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been  
terminated.  
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been  
terminated.  
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or  
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the  
other bank are determined by its current state and Truth Table 3, and according to Truth Table 4.  
Precharging:  
Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met,  
the bank will be in the idle state.  
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the  
bank will be in the row active state.  
Read w/Auto-  
Precharge Enabled:  
Starts with registration of a READ command with AUTO PRECHARGE enabled and ends when  
t
RP has been met. Once tRP is met, the bank will be in the idle state.  
Write w/Auto-  
Precharge Enabled:  
Starts with registration of a WRITE command with AUTO PRECHARGE enabled and ends when  
RP has been met. Once tRP is met, the bank will be in the idle state.  
t
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD4M16  
Rev. 1.5 10/01  
26  
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