AS4LC1M16 883C
1 MEG x 16 DRAM
AUSTIN SEMICONDUCTOR, INC.
PRELIMINARY
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 2, 3, 6, 9, 10, 11, 12, 20) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
-6
-7
-8
PARAMETER
SYM
tOES
tOFF
MIN
5
MAX
MIN
5
MAX
MIN
10
0
MAX UNITS
NOTES
OE LOW to CAS HIGH setup time
Output buffer turn-off delay
ns
0
15
0
15
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20, 26
OE setup prior to RAS during HIDDEN REFRESH cycle tORD
0
0
0
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS
tPC
tPRWC
tRAC
tRAD
tRAH
tRAL
tRAS
tRASP
tRC
tRCD
tRCH
tRCS
tREF
tRP
30
75
35
85
40
90
31
31
19
21
60
30
70
35
80
40
RAS to column-address delay time
12
10
30
60
60
110
14
0
12
10
35
70
70
130
14
0
15
10
40
80
80
150
16
0
Row-address hold time
Column-address to RAS lead time
RAS pulse width
10,000
10,000
10,000
RAS pulse width (EDO PAGE MODE)
Random READ or WRITE cycle time
RAS to CAS delay time
100,000
100,000
100,000
45
50
60
22, 25
23, 28
25
Read command hold time (referenced to CAS)
Read command setup time
0
0
0
Refresh period (1,024 cycles)
16
16
16
R
A
/
40
5
50
5
60
5
R
A
/
tRPC
tRRH
tRSH
tRWC
tRWD
tRWL
tT
Read command hold time (referenced to RAS)
RAS hold time
0
0
0
23
32
13
150
80
15
2
15
180
90
18
2
20
200
105
20
2
READ WRITE cycle time
RAS to WE delay time
13
Write command to RAS lead time
Transition time (rise or fall)
50
13
50
15
50
20
Write command hold time
tWCH
tWCR
tWCS
tWHZ
tWP
10
45
0
12
55
0
15
60
0
32
Write command hold time (referenced to RAS)
WE command setup time
13, 25
Output disable delay from WE
Write command pulse width
0
0
0
10
10
10
10
12
12
10
10
15
15
10
10
W
/
tWPZ
tWRH
tWRP
?W/
?W/
AS4LC1M16
REV. 3/97
DS000020
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.
2-101
AUSTIN [ AUSTIN SEMICONDUCTOR ]
