AS4LC1M16 883C
1 MEG x 16 DRAM
AUSTIN SEMICONDUCTOR, INC.
PRELIMINARY
CAPACITANCE
PARAMETER
SYMBOL
MAX UNITS NOTES
Input Capacitance: Addresses
Input Capacitance: RAS, CASL,CASH, WE, OE
Input/Output Capacitance: DQ
CI1
CI2
CIO
7
7
8
pF
pF
pF
8
8
8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 2, 3, 6, 9, 10, 11, 12,) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
-6
-7
-8
PARAMETER
SYM
tAA
tACH
tAR
MIN
MAX
MIN
MAX
MIN
MAX UNITS NOTES
Access time from column-address
Column-address set-up to CAS precharge
Column-address hold time (referenced to RAS)
Column-address setup time
Row-address setup time
30
35
40
ns
ns
ns
ns
ns
ns
15
45
0
15
50
0
25
60
0
tASC
tASR
tAWD
tCAC
tCAH
tCAS
tCHR
tCLCH
tCLZ
tCOH
tCP
25
25
13
0
0
0
Column-address to WE delay time
Access time from CAS
55
60
65
15
20
20
ns 14, 26
Column-address hold time
10
12
10
10
0
12
13
12
10
0
15
15
15
15
0
ns
10,000 ns
25
27
C
A
/
10,000
10,000
C
A
/
ns 7, 28
Last CAS going LOW to first CAS to return HIGH
?C?A/S to output in Low-Z
ns
ns
ns
29
26
Data output hold after next CAS LOW
CAS precharge time
3
3
3
10
10
10
ns 15, 30
Access time from CAS precharge
tCPA
tCRP
tCSH
tCSR
tCWD
tCWL
tDH
tDHR
tDS
tOD
35
40
40
ns
ns
ns
26
28
28
C
A
/
5
50
5
5
55
5
5
C
A
/
60
10
45
20
15
60
0
C
A
/
ns 7, 25
ns 13, 25
C
A
/
35
15
10
45
0
40
15
12
55
0
Write command to CAS lead time
Data-in hold time
ns
28
ns 16, 26
ns
Data-in hold time (referenced to RAS)
Data-in setup time
ns 16, 26
ns
Output disable
0
15
15
0
15
20
0
15
20
Output Enable
tOE
ns 17, 26
OE hold time from WE during READ-MODIFY-WRITE cycle tOEH
12
10
10
12
10
10
15
10
10
ns
ns
ns
18
18
O
/
tOEHC
tOEP
?O/
AS4LC1M16
REV. 3/97
DS000020
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.
2-100
AUSTIN [ AUSTIN SEMICONDUCTOR ]
