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AS4DDR32M16 参数 Datasheet PDF下载

AS4DDR32M16图片预览
型号: AS4DDR32M16
PDF下载: 下载PDF文件 查看货源
内容描述: 8梅格×16× 4银行双倍数据速率SDRAM婴儿床,塑封微电路 [8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 7665 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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Austin Semiconductor, Inc.
8 Meg x 16 x 4 Banks
Double Data Rate SDRAM
COTS, Plastic Encapsulated
Microcircuit
FEATURES
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/received with data,
i.e., source-synchronous data capture (has two – one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data
accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-aligned with data
for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (has two–one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
• t
RAS
lockout supported (t
RAP
= t
RCD
)
COTS
COTS PEM
SDRAM
AS4DDR32M16
(Top View)
PIN ASSIGNMENT
FIGURE 1: 66-Pin TSOP
OPTIONS
• Configuration
32 Meg x 16 (8 Meg x 16 x 4 banks)
• Packaging
Plastic 66-pin TSOPII
(400 mil width, 0.65mm pin pitch)
• Timing – Cycle Time
6ns @ CL = 2.5 (DDR333)
(FBGA only) (Future offering)
7.5ns @ CL = 2.5 (DDR266B)
8ns @ CL = 2.5 (DDR250)
• Temperature Rating
Industrial Temperature (-40°C to +85°C)
Enhanced Temperature (-40°C to +105°C)
Military Temperature (-55°C to +125°C)
MARKING
32M16
Configuation
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
8 Meg x 16 x 4 banks
8K
8K (A0 - A12)
4 (BA0, BA1)
1K (A0 - A9)
DG
TABLE 1: Key Timing Parameters
-6
-75
-8
SPEED
GRADE
-6
-75
-8
CLOCKRATE
CL = 2
133 MHz
100 MHz
100 MHz
CL=2.5
167 MHz
133 MHz
125 MHz
DATA-OUT
WINDOW
2.1 ns
2.5 ns
2.7 ns
ACCESS
WINDOW
±0.7 ns
±0.75 ns
±0.8 ns
DQS-DQ
SKEW
+0.40 ns
+0.5 ns
-0.6 ns
NOTES:
IT
ET
XT
* CL = CAS (Read) Latency
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS4DDR32M16
Rev. 1.5 06/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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