PEM
AS28F128J3M
Q-Flash
Austin Semiconductor, Inc.
AC Switching Characteristics:
(VDD=3.0V –5%/+10%, TA= Min. / Max. temperatures of
Operational Range chosen)
Symbol
128Mb
Parameter
Units
Notes
Write Operations
Min
1.0
0
70.0
50.0
55.0
0
Max
RP\ High Recovery to WE\ (CEx) going Low
CEx (WE\) Low to WE\ (CEx) going High
Write Pulse Width
Data Setup to WE\ going High
Address Setup to WE\ going High
CEx Hold from WE\ High
tRS
tCS
tWP
tDS
tAS
tCH
us
ns
ns
ns
us
ns
1
Data Hold from WE\ High
tDH
0
Address Hold from WE\ High
Write Pulse Width High
tAH
0
30
0
tWPH
tVPS
tWR
tSTS
tVPH
tWB
ns
ns
ns
ns
ns
ns
ns
VPEN Setup to WE\ going High
Write Recovery before READ
WE\ High to STA going Low
VPEN Hold from valid SRD, STS going High
WE\ High to Status Registry Busy
1
35
200
200
0
1
1
Block Erase, Program and Lock Bit Performance
Write Buffer Byte Program time (Program time 32 Bytes/ 16 Words)
Byte/Word Program time
Block Program time
Block Erase time
Set Lock Bits time
Clear Block Lock Bits time
Program Suspend Latency time to Read
Erase Suspend Latency time to Read
Typ
180
Max
654
630
1.70
5
75
0.70
30
tWED1
tWED2
tWED3
tWED4
tWED5
tWED6
tLPS
us
us
sec
sec
us
sec
us
us
11.20
0.70
0.75
10.00
0.50
25
tLES
25
35
Read Only Operations
Read Cycle time
Address to Output Delay
CEx to Output Delay
OE\ to Non-Array Output Delay
OE\ to Array Output Delay
RP\ High to Output Delay
CEx to Output in Low-Z
Min
115
Max
tRC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
115
115
50
25
210
tACE
tAOE
tAOA
tRWH
tOEC
tOEO
tODC
tODO
tOH
0
0
1
1
1
1
1
OE\ to Output in Low-Z
Cex High to Output in High-Z
OE\ High to Output in High-Z
Output Hold from Address, Cex, or OE\ change,
whichever occurs first
35
15
0
CEx Low to BYTE\ High or Low
BYTE\ to Output Delay
BYTE\ to Output in High-Z
CEx High to CEx Low
tCB
tABY
tODB
tCWH
tAPA
10
1,000
1,000
ns
ns
ns
ns
ns
1
1
1
1
0.0
Page Address Access
25
Reset Specifications
RP\ Pulse Low time
RP\ High to RESET during BLOCK ERASE, PROGRAM, or
Lock Bit configuration
Min
35
Max
100
tPLPH
tPHRH
us
ns
Notes to Switching Specifications:
1.
Sampled, not 100% tested
AS28F128J3MRG
Revision 5.0 11/23/04
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
6
AUSTIN [ AUSTIN SEMICONDUCTOR ]
