AT45DB011B
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
ISB
Standby Current
CS, RESET, WP = VIH, all inputs at
CMOS levels
2
10
µA
(1)
ICC1
Active Current, Read Operation
f = 20 MHz; IOUT = 0 mA; VCC = 3.6V
VCC = 3.6V
4
10
25
mA
mA
ICC2
Active Current, Program/Erase
Operation
10
ILI
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
1
1
µA
µA
V
ILO
VIL
VIH
VOL
VOH
0.6
Input High Voltage
Output Low Voltage
Output High Voltage
2.0
V
IOL = 1.6 mA; VCC = 2.7V
IOH = -100 µA
0.4
V
VCC - 0.2V
V
Note:
1. Icc1 during a buffer read is 20mA maximum.
AC Characteristics
Symbol
fSCK
fCAR
tWH
tWL
Parameter
Min
Typ
Max
20
Units
MHz
MHz
ns
SCK Frequency
SCK Frequency for Continuous Array Read
SCK High Time
20
22
22
SCK Low Time
ns
tCS
Minimum CS High Time
CS Setup Time
250
250
250
ns
tCSS
tCSH
tCSB
tSU
ns
CS Hold Time
ns
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
200
ns
5
10
0
ns
tH
ns
tHO
Output Hold Time
ns
tDIS
tV
tXFR
tEP
Output Disable Time
Output Valid
18
20
ns
ns
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
120
10
7
200
20
µs
ms
ms
ms
ms
µs
tP
15
tPE
6
10
tBE
Block Erase Time
7
15
tRST
tREC
RESET Pulse Width
RESET Recovery Time
10
1
µs
13
1984H–DFLSH–10/04
ATMEL [ ATMEL ]
