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90S1200 参数 Datasheet PDF下载

90S1200图片预览
型号: 90S1200
PDF下载: 下载PDF文件 查看货源
内容描述: 8 -bit微控制器1K字节的系统内可编程闪存 [8-Bit Microcontroller with 1K bytes In-System Programmable Flash]
分类和应用: 闪存微控制器
文件页数/大小: 71 页 / 1365 K
品牌: ATMEL [ ATMEL ]
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Bit 1 EEWE: EEPROM Write Enable  
The EEPROM Write Enable Signal (EEWE) is the write strobe to the EEPROM. When  
address and data are correctly set up, the EEWE bit must be set to write the value into  
the EEPROM. When the write access time (typically 2.5 ms at VCC = 5V and 4 ms at  
VCC = 2.7V) has elapsed, the EEWE bit is cleared (zero) by hardware. The user soft-  
ware can poll this bit and wait for a zero before writing the next byte. When EEWE has  
been set, the CPU is halted for two cycles before the next instruction is executed.  
Bit 0 EERE: EEPROM Read Enable  
The EEPROM Read Enable Signal (EERE) is the read strobe to the EEPROM. When  
the correct address is set up in the EEAR register, the EERE bit must be set. When the  
EERE bit is cleared (zero) by hardware, requested data is found in the EEDR register.  
The EEPROM read access takes one instruction and there is no need to poll the EERE  
bit. When EERE has been set, the CPU is halted for four cycles before the next instruc-  
tion is executed.  
Caution: If an interrupt routine accessing the EEPROM is interrupting another EEPROM  
access, the EEAR or EEDR register will be modified, causing the interrupted EEPROM  
access to fail. It is recommended to have the global interrupt flag cleared during  
EEPROM write operation to avoid these problems.  
Prevent EEPROM  
Corruption  
During periods of low VCC, the EEPROM data can be corrupted because the supply volt-  
age is too low for the CPU and the EEPROM to operate properly. These issues are the  
same as for board-level systems using the EEPROM, and the same design solutions  
should be applied.  
An EEPROM data corruption can be caused by two situations when the voltage is too  
low. First, a regular write sequence to the EEPROM requires a minimum voltage to  
operate correctly. Secondly, the CPU itself can execute instructions incorrectly, if the  
supply voltage for executing instructions is too low.  
EEPROM data corruption can easily be avoided by following these design recommen-  
dations (one is sufficient):  
1. Keep the AVR RESET active (low) during periods of insufficient power supply  
voltage. This is best done by an external low VCC Reset Protection circuit, often  
referred to as a Brown-out Detector (BOD). Please refer to application note AVR  
180 for design considerations regarding power-on reset and low-voltage  
detection.  
2. Keep the AVR core in Power-down Sleep mode during periods of low VCC. This  
will prevent the CPU from attempting to decode and execute instructions, effec-  
tively protecting the EEPROM registers from unintentional writes.  
3. Store constants in Flash memory if the ability to change memory contents from  
software is not required. Flash memory cannot be updated by the CPU, and will  
not be subject to corruption.  
26  
AT90S1200  
0838HAVR03/02  
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