Electrical Characteristics
Absolute Maximum Ratings
*NOTICE:
Stresses above those listed may cause perma-
nent damages to the device. Exposure to abso-
lute maximum rating conditions for extended
period may affect device reliability.
Ambient temperature under bias (TA)... Military –55 to +125°C
Junction temperature .....................................................175°C
Storage temperature .........................................–65 to +150°C
Power Dissipation: ..........................................0.3W
Themal Resistance Junction to Case: ...........5.1°C/W
TTL/CMOS :
Supply voltage ........................................... VDD –0.5V to +6V
I/O voltage ............................................. –0.5V to VDD + 0.5V
DC Characteristics
Specified at VDD = +5V +/– 10%
Symbol
Parameter
Min
0
Typ
Max
0.3VDD
VDD
Unit
V
Conditions
Input LOW voltage
CMOS input
VIL
Input HIGH voltage
CMOS input
VIH
VOL
VOH
0.7VDD
V
Output LOW voltage
CMOS Output
IOL = +6 mA (1)
IOH = -6 mA (1)
0.4
V
Output HIGH voltage
CMOS Output
3.9
V
Input Leakage current
NO Pull up/down
IL
+/- 1
+/-1
+/- 5
+/-5
mA
mA
IOZ
3-State Output Leakage current
Output Short circuit current
BOUT6
IOS
IOSN
IOSP
24
18
mA
mA
VOUT = 4.5V
VOUT = VSS
Note:
1. According to the following buffers: BOUT6, BIOC6 @ VDD = 4.5V
4
AT7908E
4268D–AERO–11/09
ATMEL [ ATMEL ]
