APM4500
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.10
2.00
ID=8A
VGS=4.5V
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
ID=8A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
8
1000
800
600
400
200
0
Frequency=1MHz
VDS=10V
ID=1A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
0
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
5
www.anpec.com.tw
Rev. A.2 - May., 2003
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
