APM4500
Typical Characteristics
P-Channel MOSFET
Output Characteristics
Transfer Characteristics
10
10
8
-VGS=3,4.5,6,7,8V
-VGS=2V
8
6
4
2
0
6
4
-VGS=1.5V
-VGS=1V
TJ=25°C
TJ=-55°C
TJ=125°C
2
0
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.50
-IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
-VGS=2.5V
-VGS=4.5V
0
2
4
6
8
10
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
7
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