APM4500
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Drain-Source Voltage
N-Channel
P-Channel
-20
Unit
20
±12
8
V
VGSS
Gate-Source Voltage
±12
*
ID
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
-4.3
A
IDM
35
-17
2.5
2.5
TA=25°C
TA=100°C
W
PD
Maximum Power Dissipation
1.0
1.0
TJ
Maximum Junction Temperature
Storage Temperature Range
150
°C
TSTG
RθjA
-55 to 150
62.5
°C
Thermal Resistance – Junction to Ambient
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM4500
Symbol
Static
Parameter
Test Condition
Unit
Min. Typ. Max.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
1
Drain-Source Breakdown
Voltage
BVDSS
V
VGS=0V , IDS=250µA
VDS=16V , VGS=0V
Zero Gate Voltage Drain
Current
IDSS
µA
VDS=-16V , VGS=0V
-1
VDS=VGS , IDS=250µA
0.5
0.7
1
-1
VGS(th) Gate Threshold Voltage
V
VDS=VGS , IDS=-250µA
VGS= 12V , VDS=0V
VGS= 12V , VDS=0V
VGS=4.5V , IDS=8A
VGS=2.5V , IDS=5.2A
VGS=-4.5V , IDS=-4.3A
VGS=-2.5V , IDS=-2A
ISD=1.7A , VGS=0V
-0.45
±100
±100
26
IGSS
Gate Leakage Current
nA
22
30
80
N-Ch
P-Ch
Drain-Source On-state
Resistance
36
a
RDS(ON)
mΩ
90
105 115
0.8 1.3
-0.7 -1.3
N-Ch
P-Ch
a
VSD
Diode Forward Voltage
V
ISD=-1.25A , VGS=0V
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
2
www.anpec.com.tw
Rev. A.2 - May., 2003
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
